Influence of introduced atoms on the coefficients of splitting Si and SiO2/Si

Influence of introduced atoms on the coefficients of splitting Si and SiO2/Si
Daraja:
Oliy ta`lim
Turi:
Maqola
Til:
Ingliz tilida
Yaratilgan vaqti:
2021-04-19 16:42:45
We have previously obtained epitaxial films of metal silicides by implantation of Ba+, Na+, Co+ ions in Si followed by thermal heating [1, 2]. The process of ion implantation is always accompanied by ion scattering, sputtering and changes in the composition of surface layers. These changes depend on the type of ion and substrate material, on the energy and dose of ions, and on the angle of incidence of ions.

Дабавлено : 2021-04-19 16:42:45

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